| PART |
Description |
Maker |
| 63S440 |
(63S440 / 63S441) High Performance 1024 x 4 PROM TiW PROM Family
|
MM
|
| HCMS-2902 HCMS-2903 HCMS-2904 HCMS-2911 HCMS-2912 |
HCMS-2962 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2961 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2964 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2963 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2925 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2924 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2923 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2922 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2921 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2915 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2914 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2913 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2912 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2911 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2905 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2904 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2903 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2902 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2901 · High Performance CMOS 5 x 7 Alphanumeric Displays
HCMS-2975-HI000 · High Performance CMOS 5 x 7 Alphanumeric Displays
Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5
T-PNP-SI-HV AF PWR AMP
High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
|
http://
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Vishay Intertechnology, Inc.
|
| PIC18F8720 |
64/80-Pin High-Performance, 256 Kbit to 1 Mbit Enhanced Flash Microcontrollers with A/D
|
Microchip Technology
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| AM24LC02 AM24LC02IN8 AM24LC02IN8A AM24LC02IS8 AM24 |
2-Wire Serial 2K-bits (256 x 8) CMOS Electrically Erasable PROM 2线串行的2K位（256 × 8）的CMOS电可擦除可编程ROM
RES POWER 10 OHM 1W 10% SMD 2线串行的2K位（256 × 8）的CMOS电可擦除可编程ROM
ECONOLINE: REC3-S_DR/H1 - 3W DIP Package- 1kVDC Isolation- Regulated Output- UL94V-0 Package Material- Continuous Short Circiut Protection- Internal SMD design- 100% Burned In- Efficiency to 75%
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| AM29F200AT-55EC AM29F200AT-55EE AM29F200AT-55EI AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 120 ns, PDSO44
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 90 ns, PDSO44
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 70 ns, PDSO44
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 150 ns, PDSO44
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 55 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 150 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 120 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 90 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| 24AA1603 24LC16B 24AA16-I/MS 24AA16-I/MSG 24AA16-I |
16K I2C垄芒 Serial EEPROM
16K I2C?/a> Serial EEPROM
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C™ compatible 2-wire serial interface bus. The 24LC16B features hardware write protect, Schmitt trigger in
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C™ ...
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I<SUP>2</SUP>C™ ...
16K I2C Serial EEPROM
|
Microchip Technology Inc.
|
| M4-128/64-18VI M4-128/64-18YI M4-128N/64-18JI M4LV |
High Performance E 2 CMOS In-System Programmable Logic
High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 128 macrocells, 64 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 5V Vcc, 128 macrocells, 64 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 192 macrocells, 96 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 5V Vcc, 256 macrocells, 128 I/Os, 14ns
High-performance E2CMOS in-system programmable logic, 3.3V Vcc, 256 macrocells, 128 I/Os, 14ns
|
Lattice Semiconductor
|
| ST902X |
16K PROM / 256 RAM HCMOS MCUS
|
意法半导
|
| IDT72V8985 IDT72V8985DB IDT72V8985J IDT72V8985PV I |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 256 x 256
256 x 256 TSI, 8 I/O at 2Mbps, Variable/Constant Delay, 3.3V
|
Integrated Device Technology
IDT
|
| AM29LV102BB-90FEB AM29LV102BB-70FEB AM29LV102BT-12 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位56亩8位）.0伏的CMOS只，引导扇区32引脚闪存
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位56亩8位）3.0伏的CMOS只，引导扇区32引脚闪存
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 70 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区32引脚闪存
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector 32-Pin Flash Memory 256K X 8 FLASH 3V PROM, 90 ns, PQCC32
|
Advanced Micro Devices, Inc.
|
|
